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IRFP460 N-Channel Power MOSFET Transistor TO-247 (500V-0.27Ω-20A)
Home / Transistors

IRFP460 N-Channel Power MOSFET Transistor TO-247 (500V-0.27Ω-20A)

SKU: QA328#5093

7 SAR inc. Vat.

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IRFP460 N-Channel Power MOSFET Transistor TO-247 (500V-0.27Ω-20A)

Description

The IRFP460 is a high-voltage N-Channel Enhancement Power MOSFET designed for demanding power electronics applications. It offers a 500 V drain-to-source voltage (VDS) rating, 20 A continuous drain current, and a low RDS(on) of 0.24 Ω at VGS = 10 V. The device features fast switching performance, repetitive avalanche capability, and low thermal resistance, making it ideal for power supplies, inverters, motor drives, and other high-power switching applications.

Features

  • 500 V Drain-to-Source Voltage (VDS)
  • 20 A Continuous Drain Current (ID)
  • Low RDS(on): 0.24 Ω @ VGS = 10 V
  • 250 W Power Dissipation
  • Fast Switching Performance
  • Repetitive Avalanche Rated
  • Low Thermal Resistance
  • TO-247-3 Through-Hole Package
  • Suitable for SMPS, Inverters, Motor Control, and Power Conversion

Specifications

Specification Value
Device Type N-Channel Enhancement MOSFET
Package TO-247-3
Drain-Source Voltage (VDS) 500 V
Continuous Drain Current (ID) 20 A
Gate-Source Voltage (VGS) ±20 V
Power Dissipation 250 W
RDS(on) 0.24 Ω @ 10 V
Peak Surge Current 80 A
Reverse Leakage Current 25 µA
Gate Charge 18 nC @ 10 V
Input Capacitance 4100 pF @ 25 V
Turn-On Delay 23 ns
Turn-Off Delay 85 ns
Rise Time 81 ns
Fall Time 65 ns
Reverse Recovery Time 580 ns
Operating Temperature −55°C to +175°C
Mounting Type Through Hole
Pins 3

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