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IRFP460 N-Channel Power MOSFET Transistor TO-247 (500V-0.27Ω-20A)
SKU: QA328#50937 SAR inc. Vat.
IRFP460 N-Channel Power MOSFET Transistor TO-247 (500V-0.27Ω-20A)
Description
The IRFP460 is a high-voltage N-Channel Enhancement Power MOSFET designed for demanding power electronics applications. It offers a 500 V drain-to-source voltage (VDS) rating, 20 A continuous drain current, and a low RDS(on) of 0.24 Ω at VGS = 10 V. The device features fast switching performance, repetitive avalanche capability, and low thermal resistance, making it ideal for power supplies, inverters, motor drives, and other high-power switching applications.
Features
- 500 V Drain-to-Source Voltage (VDS)
- 20 A Continuous Drain Current (ID)
- Low RDS(on): 0.24 Ω @ VGS = 10 V
- 250 W Power Dissipation
- Fast Switching Performance
- Repetitive Avalanche Rated
- Low Thermal Resistance
- TO-247-3 Through-Hole Package
- Suitable for SMPS, Inverters, Motor Control, and Power Conversion
Specifications
| Specification | Value |
|---|---|
| Device Type | N-Channel Enhancement MOSFET |
| Package | TO-247-3 |
| Drain-Source Voltage (VDS) | 500 V |
| Continuous Drain Current (ID) | 20 A |
| Gate-Source Voltage (VGS) | ±20 V |
| Power Dissipation | 250 W |
| RDS(on) | 0.24 Ω @ 10 V |
| Peak Surge Current | 80 A |
| Reverse Leakage Current | 25 µA |
| Gate Charge | 18 nC @ 10 V |
| Input Capacitance | 4100 pF @ 25 V |
| Turn-On Delay | 23 ns |
| Turn-Off Delay | 85 ns |
| Rise Time | 81 ns |
| Fall Time | 65 ns |
| Reverse Recovery Time | 580 ns |
| Operating Temperature | −55°C to +175°C |
| Mounting Type | Through Hole |
| Pins | 3 |
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