IRFP460 N-Channel Power MOSFET Transistor TO-247 (500V-0.27Ω-20A)

SKU: QA328#5093

7 SAR inc. Vat.

Description

IRFP460 N-Channel Power MOSFET Transistor TO-247 (500V-0.27Ω-20A)

Description

The IRFP460 is a high-voltage N-Channel Enhancement Power MOSFET designed for demanding power electronics applications. It offers a 500 V drain-to-source voltage (VDS) rating, 20 A continuous drain current, and a low RDS(on) of 0.24 Ω at VGS = 10 V. The device features fast switching performance, repetitive avalanche capability, and low thermal resistance, making it ideal for power supplies, inverters, motor drives, and other high-power switching applications.

Features

500 V Drain-to-Source Voltage (VDS)
20 A Continuous Drain Current (ID)
Low RDS(on): 0.24 Ω @ VGS = 10 V
250 W Power Dissipation
Fast Switching Performance
Repetitive Avalanche Rated
Low Thermal Resistance
TO-247-3 Through-Hole Package
Suitable for SMPS, Inverters, Motor Control, and Power Conversion

Specifications

Specification	Value
Device Type	N-Channel Enhancement MOSFET
Package	TO-247-3
Drain-Source Voltage (VDS)	500 V
Continuous Drain Current (ID)	20 A
Gate-Source Voltage (VGS)	±20 V
Power Dissipation	250 W
RDS(on)	0.24 Ω @ 10 V
Peak Surge Current	80 A
Reverse Leakage Current	25 µA
Gate Charge	18 nC @ 10 V
Input Capacitance	4100 pF @ 25 V
Turn-On Delay	23 ns
Turn-Off Delay	85 ns
Rise Time	81 ns
Fall Time	65 ns
Reverse Recovery Time	580 ns
Operating Temperature	−55°C to +175°C
Mounting Type	Through Hole
Pins	3

IRFP460 N-Channel Power MOSFET Transistor TO-247 (500V-0.27Ω-20A)

IRFP460 N-Channel Power MOSFET Transistor TO-247 (500V-0.27Ω-20A)

Description

Features

Specifications

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