-
×
Transistor S9014-NPN
1 × 8 SAR -
×
IRFP250N HEXFET Power MOSFET Transistor 200V 30A
1 × 18 SAR
Subtotal: 26 SAR
IRFP064N 55V Single N-Channel Power MOSFET in a TO-247 package
SKU: QA328#50947 SAR inc. Vat.
IRFP064N 55V Single N-Channel Power MOSFET in a TO-247 package
Description
The IRFP064N is a high-current N-Channel Enhancement Power MOSFET optimized for low-voltage, high-current power applications. It features a 55 V drain-to-source voltage (VDS) rating, a 110 A continuous drain current at 25°C, and an ultra-low RDS(on) of 8 mΩ at VGS = 10 V. The device offers fast switching performance, fully avalanche-rated operation, and is housed in a TO-247 package, making it ideal for motor drives, DC-DC converters, battery-powered systems, and switching power supplies.
Features
- 55 V Drain-to-Source Voltage (VDS)
- 110 A Continuous Drain Current (@25°C)
- Ultra-Low RDS(on): 8 mΩ @ VGS = 10 V
- Fast Switching Performance
- Fully Avalanche Rated
- ±20 V Gate-to-Source Voltage
- Operating Temperature up to 175°C
- TO-247 Through-Hole Package
Specifications
| Specification | Value |
|---|---|
| Device Type | N-Channel Enhancement MOSFET |
| Package | TO-247 |
| Drain-Source Voltage (VDS) | 55 V |
| Continuous Drain Current (@25°C) | 110 A |
| Continuous Drain Current (@100°C) | 80 A |
| Gate-Source Voltage (VGS) | ±20 V |
| RDS(on) | 8 mΩ @ VGS = 10 V |
| Power Dissipation | Up to 200 W |
| Pulsed Drain Current | 390 A |
| Total Gate Charge (Qg) | 113 nC (Typ.) |
| Gate Threshold Voltage | 2 – 4 V |
| Operating Temperature | -55°C to +175°C |
| Mounting Type | Through Hole |
| Pins | 3 |
Related products
-42%
All Electronics Components
7 SAR inc. Vat.
All Electronics Components
10 SAR inc. Vat.
-25%
All Electronics Components
9 SAR inc. Vat.
All Electronics Components
10 SAR inc. Vat.
-20%
All Electronics Components
8 SAR inc. Vat.
All Electronics Components
18 SAR inc. Vat.
-20%
All Electronics Components
8 SAR inc. Vat.
-25%
All Electronics Components
9 SAR inc. Vat.