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IRFP064N 55V Single N-Channel Power MOSFET in a TO-247 package
Home / Transistors

IRFP064N 55V Single N-Channel Power MOSFET in a TO-247 package

SKU: QA328#5094

7 SAR inc. Vat.

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IRFP064N 55V Single N-Channel Power MOSFET in a TO-247 package

Description

The IRFP064N is a high-current N-Channel Enhancement Power MOSFET optimized for low-voltage, high-current power applications. It features a 55 V drain-to-source voltage (VDS) rating, a 110 A continuous drain current at 25°C, and an ultra-low RDS(on) of 8 mΩ at VGS = 10 V. The device offers fast switching performance, fully avalanche-rated operation, and is housed in a TO-247 package, making it ideal for motor drives, DC-DC converters, battery-powered systems, and switching power supplies.

Features

  • 55 V Drain-to-Source Voltage (VDS)
  • 110 A Continuous Drain Current (@25°C)
  • Ultra-Low RDS(on): 8 mΩ @ VGS = 10 V
  • Fast Switching Performance
  • Fully Avalanche Rated
  • ±20 V Gate-to-Source Voltage
  • Operating Temperature up to 175°C
  • TO-247 Through-Hole Package

Specifications

Specification Value
Device Type N-Channel Enhancement MOSFET
Package TO-247
Drain-Source Voltage (VDS) 55 V
Continuous Drain Current (@25°C) 110 A
Continuous Drain Current (@100°C) 80 A
Gate-Source Voltage (VGS) ±20 V
RDS(on) 8 mΩ @ VGS = 10 V
Power Dissipation Up to 200 W
Pulsed Drain Current 390 A
Total Gate Charge (Qg) 113 nC (Typ.)
Gate Threshold Voltage 2 – 4 V
Operating Temperature -55°C to +175°C
Mounting Type Through Hole
Pins 3

 

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