{"id":34232,"date":"2026-07-26T10:32:45","date_gmt":"2026-07-26T07:32:45","guid":{"rendered":"https:\/\/qariya.net\/?post_type=product&p=34232"},"modified":"2026-07-26T10:42:57","modified_gmt":"2026-07-26T07:42:57","slug":"irfp064n-55v-single-n-channel-power-mosfet-in-a-to-247-package","status":"publish","type":"product","link":"https:\/\/qariya.net\/en\/product\/irfp064n-55v-single-n-channel-power-mosfet-in-a-to-247-package\/","title":{"rendered":"IRFP064N 55V Single N-Channel Power MOSFET in a TO-247 package"},"content":{"rendered":"

IRFP064N 55V Single N-Channel Power MOSFET in a TO-247 package<\/strong><\/h1>\n

Description<\/strong><\/h3>\n

The IRFP064N<\/strong> is a high-current N-Channel Enhancement Power MOSFET<\/strong> optimized for low-voltage, high-current power applications. It features a 55 V drain-to-source voltage (VDS)<\/strong> rating, a 110 A continuous drain current<\/strong> at 25\u00b0C<\/strong>, and an ultra-low RDS(on)<\/strong> of 8 m\u03a9<\/strong> at VGS = 10 V<\/strong>. The device offers fast switching performance<\/strong>, fully avalanche-rated operation<\/strong>, and is housed in a TO-247<\/strong> package, making it ideal for motor drives, DC-DC converters, battery-powered systems, and switching power supplies.<\/p>\n

Features<\/strong><\/h3>\n
    \n
  • 55 V Drain-to-Source Voltage (VDS)<\/li>\n
  • 110 A Continuous Drain Current (@25\u00b0C)<\/li>\n
  • Ultra-Low RDS(on): 8 m\u03a9 @ VGS = 10 V<\/li>\n
  • Fast Switching Performance<\/li>\n
  • Fully Avalanche Rated<\/li>\n
  • \u00b120 V Gate-to-Source Voltage<\/li>\n
  • Operating Temperature up to 175\u00b0C<\/li>\n
  • TO-247 Through-Hole Package<\/li>\n<\/ul>\n

    Specifications<\/strong><\/h3>\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n
    Specification<\/th>\nValue<\/th>\n<\/tr>\n<\/thead>\n
    Device Type<\/td>\nN-Channel Enhancement MOSFET<\/td>\n<\/tr>\n
    Package<\/td>\nTO-247<\/td>\n<\/tr>\n
    Drain-Source Voltage (VDS)<\/td>\n55 V<\/td>\n<\/tr>\n
    Continuous Drain Current (@25\u00b0C)<\/td>\n110 A<\/td>\n<\/tr>\n
    Continuous Drain Current (@100\u00b0C)<\/td>\n80 A<\/td>\n<\/tr>\n
    Gate-Source Voltage (VGS)<\/td>\n\u00b120 V<\/td>\n<\/tr>\n
    RDS(on)<\/td>\n8 m\u03a9 @ VGS = 10 V<\/td>\n<\/tr>\n
    Power Dissipation<\/td>\nUp to 200 W<\/td>\n<\/tr>\n
    Pulsed Drain Current<\/td>\n390 A<\/td>\n<\/tr>\n
    Total Gate Charge (Qg)<\/td>\n113 nC (Typ.)<\/td>\n<\/tr>\n
    Gate Threshold Voltage<\/td>\n2 \u2013 4 V<\/td>\n<\/tr>\n
    Operating Temperature<\/td>\n-55\u00b0C to +175\u00b0C<\/td>\n<\/tr>\n
    Mounting Type<\/td>\nThrough Hole<\/td>\n<\/tr>\n
    Pins<\/td>\n3<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n

     <\/p>\n","protected":false},"excerpt":{"rendered":"

    IRFP064N 55V Single N-Channel Power MOSFET in a TO-247 package Description The IRFP064N is a high-current N-Channel Enhancement Power MOSFET optimized for low-voltage, high-current power applications. It features a 55 V drain-to-source voltage (VDS) rating, a 110 A continuous drain current at 25\u00b0C, and an ultra-low RDS(on) of 8 m\u03a9 at VGS = 10 V. […]\n","protected":false},"featured_media":34235,"template":"","meta":[],"product_cat":[210,142],"product_tag":[],"_links":{"self":[{"href":"https:\/\/qariya.net\/en\/wp-json\/wp\/v2\/product\/34232"}],"collection":[{"href":"https:\/\/qariya.net\/en\/wp-json\/wp\/v2\/product"}],"about":[{"href":"https:\/\/qariya.net\/en\/wp-json\/wp\/v2\/types\/product"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/qariya.net\/en\/wp-json\/wp\/v2\/media\/34235"}],"wp:attachment":[{"href":"https:\/\/qariya.net\/en\/wp-json\/wp\/v2\/media?parent=34232"}],"wp:term":[{"taxonomy":"product_cat","embeddable":true,"href":"https:\/\/qariya.net\/en\/wp-json\/wp\/v2\/product_cat?post=34232"},{"taxonomy":"product_tag","embeddable":true,"href":"https:\/\/qariya.net\/en\/wp-json\/wp\/v2\/product_tag?post=34232"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}